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PD - 94057B
IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4# TECHNOLOGY
TM (R)
Product Summary
Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27 IRHQ563110 300K Rads (Si) 0.29 IRHQ567110 100K Rads (Si) 0.96 IRHQ563110 300K Rads (Si) 0.98 ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P
LCC-28
International Rectifier's RAD-HardTM HEXFET(R) MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page
Pre-Irradiation
N-Channel
4.6 2.9 18.4 12 0.1 20 47 4.6 1.2 6.1 -55 to 150
o
P-Channel
-2.8 -1.8 -11.2 12
0.1
Units A
W
W/C
20 70 ~ -2.8 1.2 7.1
V mJ A mJ V/ns
C
300 (for 5s) 0.89 (Typical)
g
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1
07/25/01
IRHQ567110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- -- 2.0 3.3 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.31 0.27 4.0 -- 10 25 100 -100 13 4.0 3.9 20 24 32 90 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 4.6A VGS = 12V, ID = 2.9A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 2.9A VDS= 80V, VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 4.6A VDS = 50V VDD = 50V, ID = 4.6A, VGS = 12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
371 108 3.0
-- -- --
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 4.6 18.4 1.2 173 863
Test Conditions
A
V nS nC Tj = 25C, IS = 4.6A, VGS = 0V Tj = 25C, IF = 4.6A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 11.8 60
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Pre-Irradiation
IRHQ567110
Electrical Characteristics For Each P-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 1.9 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 1.2 0.96 -4.0 -- -10 -25 -100 100 11 3.0 4.2 20 24 32 90 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -2.8A VGS = -12V, ID = -1.8A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.8A VDS= -80V, VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -2.8A VDS = -50V VDD = -50V, ID = -2.8A, VGS = -12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
377 102 7.0
-- -- --
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -2.8 -11.2 -5.0 138 555
Test Conditions
A
V nS nC Tj = 25C, IS = -2.8A, VGS = 0V Tj = 25C, IF = -2.8A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 11.8 60
C/W
Test Conditions
Typical socket mount
For footnotes refer to the last page
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3
IRHQ567110
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage
100K Rads(Si)1 Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.226 0.27 1.2
300K Rads (Si)2 Units Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.246 0.29 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID = 2.9A VGS = 12V, ID = 2.9A VGS = 0V, IS = 4.6A
1. Part number IRHQ567110 2. Part number IRHQ563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS= -8V @VGS=-10V @VGS=-15V 39.5 100 100 100 100 100 32.5 100 100 100 100 35 28.4 100 100 100 80 25 @VGS=-20V 100 25 --
120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20
Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
VDS
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Pre-Irradiation
IRHQ567110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage
100K Rads(Si)1 Min Max -100 - 2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.916 0.96 -5.0
300K Rads (Si)2 Min Max -100 - 2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.936 0.98 -5.0
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID = -1.8A VGS = -12V, ID = -1.8A VGS = 0V, IS = -2.8A
1. Part number IRHQ567110 2. Part number IRHQ563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion Br I Au LET MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 344 351 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V -100 36.8 -100 -100 -100 -100 -100 32.7 -100 -100 -100 -100 -75 -25 28.5 -100 -100 -100 -30 -- --
-120 -100 -80 -60 -40 -20 0 0 5 10 VGS 15 20
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
5
IRHQ567110 N-Channel Q1,Q4
100
Pre-Irradiation
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
1
1
5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.6A
I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
10
1.5
TJ = 25 C
1
1.0
0.5
0.1 5.0
V DS = 25V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
6
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Pre-Irradiation N-Channel Q1,Q4
800
IRHQ567110
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
600
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 4.6A
16
VDS = 80V VDS = 50V VDS = 20V
400
Ciss C oss
12
8
200
4
C rss
0 1 10 100
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
12 8 16
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
10
TJ = 150 C TJ = 25 C
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
1ms
10ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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7
IRHQ567110 N-Channel Q1,Q4
5.0
Pre-Irradiation
V DS VGS
RD
D.U.T.
+
4.0
RG
I D , Drain Current (A)
-V DD
3.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20 10 0.10 0.05 0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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Pre-Irradiation N-Channel Q1,Q4
100
IRHQ567110
EAS , Single Pulse Avalanche Energy (mJ)
15V
80
TOP BOTTOM ID 2.1A 2.9A 4.6A
VDS
L
D R IV E R
60
RG
D .U .T.
IA S tp
+ V - DD
A
VGS 20V
40
0 .01
Fig 12a. Unclamped Inductive Test Circuit
20
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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9
IRHQ567110 P-Channel Q2,Q3
100
Pre-Irradiation
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-5.0V
-5.0V
1
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -2.8A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
10
1.5
TJ = 150 C
1.0
0.5
1 5.0
V DS = -50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
10
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Pre-Irradiation P-Channel Q2,Q3
600
IRHQ567110
500
-VGS , Gate-to-Source Voltage (V)
VGS Ciss Crss Coss = = = = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = -2.8A
16
C, Capacitance (pF)
VDS = -80V VDS = -50V VDS = -20V
400
C iss
12
300
8
200
C oss
4
100
C rss
0 1 10 100
0 0 2 4
FOR TEST CIRCUIT SEE FIGURE 13
8 10 6 12
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10
-ISD , Reverse Drain Current (A)
10
TJ = 150 C
TJ = 25 C
-I D, Drain-to-Source Current (A)
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
1ms 10ms
0.1 1.0
V GS = 0 V
2.0 3.0 4.0 5.0 6.0
-VSD ,Source-to-Drain Voltage (V)
1000
-VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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11
IRHQ567110 P-Channel Q2,Q3
3.0
Pre-Irradiation
V DS VGS RG
RD
2.5
D.U.T.
+
-ID , Drain Current (A)
2.0
VGS
1.5
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.5
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20 10 0.10 0.05 0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
12
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-
V DD
Pre-Irradiation P-Channel Q2,Q3
VDS
L
IRHQ567110
150
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T.
IA S
VD D A D R IV E R
120
VGS -20V
tp
ID -1.3A -1.8A BOTTOM -2.8A TOP
0.0 1
90
15V
60
Fig 12a. Unclamped Inductive Test Circuit
30
0 25 50 75 100 125 150
IAS
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
13
IRHQ567110
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 4.4mH, Peak IL = 4.6A, VGS =12V ISD 4.6A, di/dt 300A/s, VDD 100V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A ~ VDD = - 25V, starting TJ = 25C, L=17.8mH, Peak IL = - 2.8A, VGS = -12V ISD - 2.8A, di/dt - 263A/s, VDD -100V, TJ 150C
Case Outline and Dimensions -- LCC-28
Q2
Q1 Q3 Q4
Q3
Q4 Q2 Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
14
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